View AP2301MTR_901140.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR General Description
The AP2301 linear regulator is designed to meet the JEDEC specification SSTL-2 and SSTL-18 for termination of DDR-SDRAM. The regulator can sink or source up to 1.5A current continuously, offers enough current for most DDR applications. Output voltage is designed to track the reference voltage within a 2% tolerance for load regulation while preventing shooting through on the output stage. On-chip thermal limiting provides protection against a combination of high current and ambient temperature which would create an excessive junction temperature. The AP2301, used in conjunction with series termination resistors, provides an excellent voltage source for active termination schemes of high speed transmission lines as those seen in high speed memory buses and distributed backplane designs. The AP2301 is available in SOIC-8 and TO-252-5L packages.
AP2301 Features
* * * * * Support Both DDR I (1.25VTT) and DDR II (0.9VTT) Requirements Source and Sink Current up to 1.5A High Accuracy Output Voltage at Full-load Adjustable VOUT by External Resistors Shutdown for Standby or Suspend Mode Operation with High-impedance Output
Applications
* * * DDR-SDRAM Termination DDR-II Termination SSTL-2 Termination
SOIC-8
TO-252-5L
Figure 1. Package Types of AP2301
Jul. 2006 Rev. 1. 3 1
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Pin Configuration AP2301
M Package (SOIC-8)
VIN GND REFEN VOUT
D Package (TO-252-5L)
5 4 3 2 1 VOUT REFEN VCNTL (TAB) GND VIN
1 2 3 4
8 7 6 5
VCNTL VCNTL VCNTL VCNTL
Figure 2. Pin Configuration of AP2301 (Top View)
Pin Description
Pin Number Pin Name SOIC-8 1 2 3 4 5, 6, 7, 8 TO-252-5L 1 2 4 5 3 VIN GND REFEN VOUT VCNTL Power Input Ground Reference Voltage Input and Chip Enable Output Voltage Supply Voltage for Internal Circuit (Internally Connected for SOIC-8), (TAB for TO-252-5L) Function
Jul. 2006 Rev. 1. 3 2
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Functional Block Diagram
VCNTL VIN
AP2301
CURRENT LIMIT BANDGAP
REFEN
START UP THERMAL PROTECT
OUTPUT CONTROL
VOUT
GND
Figure 3. Functional Block Diagram of AP2301
Ordering Information
AP2301 Circuit Type Package M: SOIC-8 D: TO-252-5L E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube
Package
Temperature Range
Part Number Tin Lead AP2301M Lead Free AP2301M-E1 AP2301MTR-E1 AP2301D-E1 AP2301DTR-E1
Marking ID Packing Type Tin Lead 2301M 2301M AP2301D AP2301D Lead Free 2301M-E1 2301M-E1 AP2301D-E1 AP2301D-E1 Tube Tape Reel
SOIC-8
0 to 125oC AP2301MTR AP2301D 0 to 125oC AP2301DTR Tape Reel Tube
TO-2525L
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Jul. 2006 Rev. 1. 3 3
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Absolute Maximum Ratings (Note 1)
Parameter Supply Voltage for Internal Circuit Power Dissipation ESD (Human Body Model) Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) Symbol VCNTL PD ESD TJ TSTG TLEAD JA SOIC-8 TO-252-5L Value 7 Internally Limited 2 150 -65 to 150 260 160
oC/W
AP2301
Unit V W KV
oC o
C
oC
Package Thermal Resistance (Free Air)
130
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Supply Voltage for Internal Circuit DDR I Power Input DDR II Junction Temperature Note 2: Keep VCNTL TJ VIN in power on and power off sequences. 0 VIN 1.6 1.8 125
oC
Symbol VCNTL (Note 2, 3)
Min
Typ 3.3 2.5
Max 6 VCNTL
Unit V V
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.
Jul. 2006 Rev. 1. 3 4
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Electrical Characteristics
(TJ=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10F (Ceramic), unless otherwise specified.) Parameter Output Offset Voltage DDR I Load Regulation DDR II Quiescent Current of VCNTL Leakage Current in Shutdown Mode Protection Current Limit Thermal Shutdown Temperature Thermal Shutdown Hysteresis Shutdown Function Shutdown Threshold Trigger Output = High Output = Low Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN. 0.8 0.2 V ILIMIT TSHDN 3.3V VCNTL 5V 2.1 150 50 A
oC oC
AP2301
Symbol VOS
Conditions L=0 (Note 4) IL=0 to 1.5A IL=0 to -1.5A IL=0 to 1.5A IL=0 to -1.5A No Load VREFEN<0.2V, RL=180
Min -20
Typ 0 0.8 0.8 1.2 1.2 3 3
Max 20 2 2 3 3 5 6
Unit mV
VOUT/ VOUT IQ ISHDN
%
mA
A
Jul. 2006 Rev. 1. 3 5
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Typical Performance Characteristics AP2301
5
5
Sourcing Current (A)
Sinking Current (A)
4
4
3
3
VCNTL=3.3V
2
2
VIN=2.5V VOUT=1.25V
1
VCNTL=3.3V VIN=2.5V VOUT=1.25V
1 -40
-20
0
20
40
60
o
80
100
120
-40
-20
0
20
40
60
o
80
100
120
Junction Temperature ( C)
Junction Temperature ( C)
Figure 4. Sourcing Current vs. Junction Temperature
Figure 5. Sinking Current vs. Junction Temperature
650
650
Threshold Voltage (mV)
600
Threshold Voltage (mV)
600
550
550
VCNTL=3.3V
500
VCNTL=5.0V
500
VIN=2.5V
VIN=2.5V
-40
-20
0
20
40
60
o
80
100
120
-40
-20
0
20
40
60
o
80
100
120
Junction Temperature ( C)
Junction Temperature ( C)
Figure 6. Threshold Voltage vs. Junction Temperature
Figure 7. Threshold Voltage vs. Junction Temperature
Jul. 2006 Rev. 1. 3 6
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Typical Performance Characteristics (Continued) AP2301
20 Output Transient Voltage (mV) 10 0 -10 1.5 0.5.5 Output Current (A) Output Current (A) -0.5 -1.5 -2.5
Time (s)
20 Output Transient Voltage (mV) 10 0 -10 1.5 0.5 -0.5 -1.5 -2.5
Time (s)
Figure 8. 0.9VTT at 1.5A Transient Response (Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10F)
Figure 9. 1.25VTT at 1.5A Transient Response (Conditions:VIN=2.5V, VCNTL=3.3V, COUT=10F)
0.40 0.39 0.38 0.37 0.36
0.39
VIN=0.9V VIN=0.85V VIN=0.8V
0.38 0.37 0.36
VIN=0.9V VIN=0.85V VIN=0.8V
RDS(ON) ()
0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 40 60 80
o
RDS(ON) ()
VCNTL=3.3V VREFEN=1.0V
0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28
VCNTL=5.0V VREFEN=1.0V
100
120
40
60
80
o
100
120
Junction Temperature ( C)
Junction Temperature( C)
Figure 10. RDS(on) vs. Junction Temperature
Figure 11. RDS(on) vs. Junction Temperature
Jul. 2006 Rev. 1. 3 7
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Typical Performance Characteristics (Continued) AP2301
350
350
300
TC=25 C TC=65 C
o
o o
TC=25 C
300
o o o
Copper Area (mm )
Copper Area (mm )
2
250
TC=50 C
TC=50 C TC=65 C
2
200
250
150
200
100
150
Package: TO-252-5L No heatsink
50
Package: SOIC-8 No heatsink
100
0 3.0
3.5
4.0
4.5
5.0
5.5
6.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
Power Dissipation (W)
Power Dissipation (W)
Figure 12. Copper Area vs. Power Dissipation
Figure 13. Copper Area vs. Power Dissipation
Jul. 2006 Rev. 1. 3 8
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Typical Application
VCNTL = 3.3V
AP2301
VIN = 2.5V
CCNTL R1 VIN REFEN AP2301 GND R2 CSS COUT RDUMMY VCNTL VOUT CIN
RTT
EN
Figure 14. Typical Application of AP2301
R1=R2=100K, RTT=50 /33 /25 RDUMMY=1K, as for VOUT discharge when VIN is not present but VCNTL is present CSS=1F, CIN=470F, CCNTL=47F, COUT=470F
Jul. 2006 Rev. 1. 3 9
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Mechanical Dimensions SOIC-8 Unit: mm(inch) AP2301
4.800(0.189) 5.000(0.197)
7
1.350(0.053) 1.750(0.069)
0.320(0.013)
8
7
8
0.675(0.027) 0.725(0.029)
D
5.800(0.228) 6.200(0.244)
D 20:1
1.270(0.050) TYP
0.100(0.004) 0.300(0.012) R0.150(0.006)
0.800(0.031) 0.200(0.008)
1.000(0.039) 3.800(0.150) 4.000(0.157)
0 8
0.330(0.013) 0.510(0.020) 0.900(0.035)
1 5
R0.150(0.006)
0.190(0.007) 0.250(0.010)
Jul. 2006 Rev. 1. 3 10
BCD Semiconductor Manufacturing Limited
Preliminary Datasheet 1.5A DDR TERMINATION REGULATOR Mechanical Dimensions (Continued) TO-252-5L Unit: mm(inch) AP2301
0.900(0.035) 1.250(0.049)
6.350(0.250) 6.700(0.264) 4.300(0.169) 5.500(0.217)
2.180(0.086) 2.400(0.094) 0.430(0.017) 0.600(0.023)
4.800(0.189) MIN
9.500(0.374) 10.400(0.410) 0.000(0.000) 0.250(0.010)
5.970(0.235) 6.220(0.245)
4.300(0.169) 5.400(0.213)
2.540(0.100)BSC 5.080(0.200) BSC
0.450(0.018) 0.700(0.028)
1.400(0.055) 1.780(0.070)
0.430(0.017) 0.600(0.023)
2.550(0.100) 3.200(0.126)
Jul. 2006 Rev. 1. 3 11
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.
MAIN SITE BCD Semiconductor Manufacturing Limited
- Wafer Fab Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
- IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
REGIONAL SALES OFFICE
Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166 Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: +886-2-2656 2808, Fax: +886-2-2656 2806 USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA 95054-2411, U.S.A Tel: +1-408-988 6388, Fax: +1-408-988 6386

▲Up To Search▲

Price & Availability of AP2301MTR

	To Download AP2301MTR Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .